
IGBT module
Collector-Emitter Voltage:1200 V
Gate-Emitter Voltage±20 V (max)
Turn-On Delay Time:80 ns (typical)
IGBT Junction-to-Case:0.08 K/W
Diode Junction-to-Case:0.10 K/W
Operating Junction Temperature:-40°C to +150°C
Storage Temperature:-40°C to +125°C